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000006195 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000006195 084__ $$2WoS$$aMaterials Science, Coatings & Films
000006195 084__ $$2WoS$$aPhysics, Applied
000006195 084__ $$2WoS$$aPhysics, Condensed Matter
000006195 1001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b0$$uFZJ
000006195 245__ $$aStudy on the dynamic resistance switching properties of NiO thin films
000006195 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2010
000006195 300__ $$a2258 - 2260
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000006195 440_0 $$05762$$aThin Solid Films$$v518$$x0040-6090$$yIssue 8
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000006195 520__ $$aThe resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved.
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000006195 65320 $$2Author$$aUnipolar resistive switching
000006195 65320 $$2Author$$aResistive random access memory
000006195 65320 $$2Author$$aNickel oxide
000006195 7001_ $$0P:(DE-Juel1)VDB75716$$aWeng, R.$$b1$$uFZJ
000006195 7001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b2$$uFZJ
000006195 7001_ $$0P:(DE-HGF)0$$aSymanczyk, R.$$b3
000006195 7001_ $$0P:(DE-HGF)0$$aMajewski, P.$$b4
000006195 7001_ $$0P:(DE-HGF)0$$aUfert, K.-D.$$b5
000006195 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$uFZJ
000006195 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2009.10.040$$gVol. 518, p. 2258 - 2260$$p2258 - 2260$$q518<2258 - 2260$$tThin solid films$$v518$$x0040-6090$$y2010
000006195 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2009.10.040
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