TY  - JOUR
AU  - Kügeler, C.
AU  - Weng, R.
AU  - Schroeder, H.
AU  - Symanczyk, R.
AU  - Majewski, P.
AU  - Ufert, K.-D.
AU  - Waser, R.
TI  - Study on the dynamic resistance switching properties of NiO thin films
JO  - Thin solid films
VL  - 518
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-6195
SP  - 2258 - 2260
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000274812800065
DO  - DOI:10.1016/j.tsf.2009.10.040
UR  - https://juser.fz-juelich.de/record/6195
ER  -