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@ARTICLE{Kgeler:6195,
      author       = {Kügeler, C. and Weng, R. and Schroeder, H. and Symanczyk,
                      R. and Majewski, P. and Ufert, K.-D. and Waser, R.},
      title        = {{S}tudy on the dynamic resistance switching properties of
                      {N}i{O} thin films},
      journal      = {Thin solid films},
      volume       = {518},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-6195},
      pages        = {2258 - 2260},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The resistive switching properties of NiO-based memory
                      cells were investigated utilizing test structures with a
                      Storage contact size of 150 nm in diameter. Two well defined
                      stable resistance states with high OFF/ON ratios were
                      achieved by unipolar operation. Detailed electrical
                      characterizations with respect to nonvolatile memory
                      applications reveal fast (<300 ns) and reliable switching
                      performance at low operating voltages (<2.5 V). Promising
                      results of endurance data (>1000cycles) and retention tests
                      up to 110 degrees C show excellent stability and indicate
                      the competitive potential with respect to established
                      nonvolatile memory devices. (C) 2009 Elsevier B.V. All
                      rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000274812800065},
      doi          = {10.1016/j.tsf.2009.10.040},
      url          = {https://juser.fz-juelich.de/record/6195},
}