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@ARTICLE{Kgeler:6195,
author = {Kügeler, C. and Weng, R. and Schroeder, H. and Symanczyk,
R. and Majewski, P. and Ufert, K.-D. and Waser, R.},
title = {{S}tudy on the dynamic resistance switching properties of
{N}i{O} thin films},
journal = {Thin solid films},
volume = {518},
issn = {0040-6090},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {PreJuSER-6195},
pages = {2258 - 2260},
year = {2010},
note = {Record converted from VDB: 12.11.2012},
abstract = {The resistive switching properties of NiO-based memory
cells were investigated utilizing test structures with a
Storage contact size of 150 nm in diameter. Two well defined
stable resistance states with high OFF/ON ratios were
achieved by unipolar operation. Detailed electrical
characterizations with respect to nonvolatile memory
applications reveal fast (<300 ns) and reliable switching
performance at low operating voltages (<2.5 V). Promising
results of endurance data (>1000cycles) and retention tests
up to 110 degrees C show excellent stability and indicate
the competitive potential with respect to established
nonvolatile memory devices. (C) 2009 Elsevier B.V. All
rights reserved.},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {070},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Materials Science, Multidisciplinary / Materials Science,
Coatings $\&$ Films / Physics, Applied / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000274812800065},
doi = {10.1016/j.tsf.2009.10.040},
url = {https://juser.fz-juelich.de/record/6195},
}