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| 001 | 6195 | ||
| 005 | 20180208213430.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.tsf.2009.10.040 |
| 024 | 7 | _ | |2 WOS |a WOS:000274812800065 |
| 037 | _ | _ | |a PreJuSER-6195 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 070 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Kügeler, C. |b 0 |u FZJ |0 P:(DE-Juel1)VDB15125 |
| 245 | _ | _ | |a Study on the dynamic resistance switching properties of NiO thin films |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2010 |
| 300 | _ | _ | |a 2258 - 2260 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Thin Solid Films |x 0040-6090 |0 5762 |y Issue 8 |v 518 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Unipolar resistive switching |
| 653 | 2 | 0 | |2 Author |a Resistive random access memory |
| 653 | 2 | 0 | |2 Author |a Nickel oxide |
| 700 | 1 | _ | |a Weng, R. |b 1 |u FZJ |0 P:(DE-Juel1)VDB75716 |
| 700 | 1 | _ | |a Schroeder, H. |b 2 |u FZJ |0 P:(DE-Juel1)VDB3130 |
| 700 | 1 | _ | |a Symanczyk, R. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Majewski, P. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Ufert, K.-D. |b 5 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Waser, R. |b 6 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1016/j.tsf.2009.10.040 |g Vol. 518, p. 2258 - 2260 |p 2258 - 2260 |q 518<2258 - 2260 |0 PERI:(DE-600)1482896-0 |t Thin solid films |v 518 |y 2010 |x 0040-6090 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.tsf.2009.10.040 |
| 909 | C | O | |o oai:juser.fz-juelich.de:6195 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)114339 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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