Journal Article

PreJuSER-6197

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High density 3D memory architecture based on the resistive switching effect

Kügeler, C.FZJ* ; Meier, M.FZJ* ; Rosezin, R.FZJ* ; Gilles, S.FZJ* ; Waser, R.FZJ*

2009
Pergamon, Elsevier Science Oxford [u.a.]

This record in other databases:

Please use a persistent id in citations: doi:10.1016/sse.2009.09.034

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Bioelektronik (IBN-2)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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