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@ARTICLE{Kgeler:6197,
      author       = {Kügeler, C. and Meier, M. and Rosezin, R. and Gilles, S.
                      and Waser, R.},
      title        = {{H}igh density 3{D} memory architecture based on the
                      resistive switching effect},
      journal      = {Solid state electronics},
      volume       = {53},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {PreJuSER-6197},
      pages        = {1287 - 1292},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      cin          = {IFF-6 / JARA-FIT / IBN-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)IBN-2-20090406},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1016/sse.2009.09.034},
      url          = {https://juser.fz-juelich.de/record/6197},
}