%0 Journal Article
%A Kügeler, C.
%A Böttger, U.
%A Schneller, T.
%T Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications
%J Applied physics / A
%V 94
%@ 0947-8396
%C Berlin
%I Springer
%M PreJuSER-6199
%P 739 - 743
%D 2009
%Z Record converted from VDB: 12.11.2012
%X This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d (33) of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000263069700005
%R 10.1007/s00339-008-5045-6
%U https://juser.fz-juelich.de/record/6199