Journal Article

PreJuSER-6199

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications

Kügeler, C.FZJ* ; Böttger, U. ; Schneller, T.

2009
Springer Berlin

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Please use a persistent id in citations: doi:10.1007/s00339-008-5045-6

Abstract: This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d (33) of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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