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000006199 0247_ $$2DOI$$a10.1007/s00339-008-5045-6
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000006199 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000006199 084__ $$2WoS$$aPhysics, Applied
000006199 1001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b0$$uFZJ
000006199 245__ $$aElectromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications
000006199 260__ $$aBerlin$$bSpringer$$c2009
000006199 300__ $$a739 - 743
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000006199 520__ $$aThis paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d (33) of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.
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000006199 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b1
000006199 7001_ $$0P:(DE-HGF)0$$aSchneller, T.$$b2
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000006199 8567_ $$uhttp://dx.doi.org/10.1007/s00339-008-5045-6
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