Hauptseite > Publikationsdatenbank > Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications > print

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024 7 _ |2 DOI
|a 10.1007/s00339-008-5045-6
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|a WOS:000263069700005
024 7 _ |2 ISSN
|a 0947-8396
037 _ _ |a PreJuSER-6199
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Kügeler, C.
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245 _ _ |a Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications
260 _ _ |c 2009
|a Berlin
|b Springer
300 _ _ |a 739 - 743
336 7 _ |a Journal Article
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440 _ 0 |a Applied Physics A
|x 0947-8396
|0 560
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|v 94
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d (33) of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.
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700 1 _ |a Böttger, U.
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700 1 _ |a Schneller, T.
|b 2
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773 _ _ |0 PERI:(DE-600)1398311-8
|a 10.1007/s00339-008-5045-6
|g Vol. 94, p. 739 - 743
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|t Applied physics / A
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|x 0947-8396
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856 7 _ |u http://dx.doi.org/10.1007/s00339-008-5045-6
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