%0 Journal Article
%A Münstermann, R.
%A Dittmann, R.
%A Szot, K.
%A Mi, S.
%A Jia, C. L.
%A Meuffels, P.
%A Waser, R.
%T Realization of regular arrays of nanoscale resistive switching blocks in thin films by Nb-doped STO
%J Applied physics letters
%V 93
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-62875
%P 023110
%D 2008
%Z Record converted from VDB: 12.11.2012
%X We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R-off to R-on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy. (C) 2008 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000257796100087
%R 10.1063/1.2959074
%U https://juser.fz-juelich.de/record/62875