Journal Article

PreJuSER-62875

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Realization of regular arrays of nanoscale resistive switching blocks in thin films by Nb-doped STO

Münstermann, R.FZJ* ; Dittmann, R.FZJ* ; Szot, K.FZJ* ; Mi, S.FZJ* ; Jia, C. L.FZJ* ; Meuffels, P.FZJ* ; Waser, R.FZJ*

2008
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17370  doi:10.1063/1.2959074

Abstract: We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R-off to R-on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy. (C) 2008 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Mikrostrukturforschung (IFF-8)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2008

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