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000062875 1001_ $$0P:(DE-Juel1)VDB64025$$aMünstermann, R.$$b0$$uFZJ
000062875 245__ $$aRealization of regular arrays of nanoscale resistive switching blocks in thin films by Nb-doped STO
000062875 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2008
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000062875 440_0 $$0562$$aApplied Physics Letters$$v93$$x0003-6951
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000062875 520__ $$aWe report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R-off to R-on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy. (C) 2008 American Institute of Physics.
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000062875 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b1$$uFZJ
000062875 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b2$$uFZJ
000062875 7001_ $$0P:(DE-Juel1)VDB5304$$aMi, S.$$b3$$uFZJ
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000062875 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$uFZJ
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