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@ARTICLE{Mnstermann:62875,
author = {Münstermann, R. and Dittmann, R. and Szot, K. and Mi, S.
and Jia, C. L. and Meuffels, P. and Waser, R.},
title = {{R}ealization of regular arrays of nanoscale resistive
switching blocks in thin films by {N}b-doped {STO}},
journal = {Applied physics letters},
volume = {93},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-62875},
pages = {023110},
year = {2008},
note = {Record converted from VDB: 12.11.2012},
abstract = {We report on the realization of short-range-ordered arrays
of nanoscale resistive switching blocks in epitaxial
Nb-doped SrTiO3 thin films. These blocks can be individually
addressed by the tip of a conductive tip atomic force
microscope and reversibly switched between a high and a low
resistance state reaching an R-off to R-on ratio of up to
50. Scanning micrometer-scale areas with an appropriately
biased tip, all blocks within the scanned area can be
switched between the two resistive states. We suggest a
connection between these nanoscale switching blocks and
defect-rich nanoclusters which were detected with high
resolution transmission electron microscopy. (C) 2008
American Institute of Physics.},
keywords = {J (WoSType)},
cin = {IFF-6 / IFF-8 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB788 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000257796100087},
doi = {10.1063/1.2959074},
url = {https://juser.fz-juelich.de/record/62875},
}