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024 7 _ |a 10.1063/1.2959074
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|a Physics, Applied
100 1 _ |a Münstermann, R.
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245 _ _ |a Realization of regular arrays of nanoscale resistive switching blocks in thin films by Nb-doped STO
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2008
300 _ _ |a 023110
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440 _ 0 |a Applied Physics Letters
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500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We report on the realization of short-range-ordered arrays of nanoscale resistive switching blocks in epitaxial Nb-doped SrTiO3 thin films. These blocks can be individually addressed by the tip of a conductive tip atomic force microscope and reversibly switched between a high and a low resistance state reaching an R-off to R-on ratio of up to 50. Scanning micrometer-scale areas with an appropriately biased tip, all blocks within the scanned area can be switched between the two resistive states. We suggest a connection between these nanoscale switching blocks and defect-rich nanoclusters which were detected with high resolution transmission electron microscopy. (C) 2008 American Institute of Physics.
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700 1 _ |a Dittmann, R.
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700 1 _ |a Szot, K.
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700 1 _ |a Mi, S.
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700 1 _ |a Jia, C. L.
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700 1 _ |a Meuffels, P.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.2959074
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