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@ARTICLE{Meier:62881,
      author       = {Meier, M. and Nauenheim, C. and Gilles, S. and Mayer, D.
                      and Kügeler, C. and Waser, R.},
      title        = {{N}anoimprint for future non-volatile memory and logic
                      devices},
      journal      = {Microelectronic engineering},
      volume       = {85},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-62881},
      pages        = {870 - 872},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Nanoimprint lithography (NIL) is used to realize next
                      generation memory and logic devices. The simple device
                      structure consists of a resistance switching material
                      sandwiched between two metal nanoelectrodes. Bottom and top
                      electrodes are aligned perpendicular to each other building
                      a crossbar array structure. A significant advantage of these
                      future devices in addition to its simplicity is the high
                      integration density. Crossbar arrays with 200 nm electrodes
                      and single cross junctions with 30 nm electrodes were
                      achieved using UV NIL. The bottom electrodes were embedded
                      and planarized by spin on glass, such that an even surface
                      for the realization of the top electrodes by UV NIL could be
                      obtained. Finally electrical measurements demonstrated the
                      function of the fabricated devices. (c) 2008 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IBN-2 / IFF-6 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IBN-2-20090406 / I:(DE-Juel1)VDB786 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Optics / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000257413400034},
      doi          = {10.1016/j.mee.2008.01.101},
      url          = {https://juser.fz-juelich.de/record/62881},
}