001     6489
005     20180208202504.0
024 7 _ |2 DOI
|a 10.1007/s00339-009-5240-0
024 7 _ |2 WOS
|a WOS:000269844400029
024 7 _ |2 ISSN
|a 0947-8396
037 _ _ |a PreJuSER-6489
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Szade, J.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Self-neutralization via electroreduction in photoemission from SrTiO3 single crystals
260 _ _ |c 2009
|a Berlin
|b Springer
300 _ _ |a 449 - 454
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics A
|x 0947-8396
|0 560
|y 2
|v 97
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The effect of bulk mediated neutralization in photoemission from insulating monocrystalline SrTiO3 was studied. Long-term measurements of the photoemission line shift and emission current allowed us to relate the observed systematic reduction of the surface charging to increasing conductivity of the samples. The bulk resistance of the SrTiO3 samples was found to scale with their thickness. We present a model of the observed behaviour based on well-conducting filaments connecting the surface with the grounded sample holder, similar to the hypothesis explaining resistive switching in single crystals and thin films of SrTiO3. In our model the changes of the local oxygen stoichiometry are driven by surface potential and consequently electric field and chemical gradients, which cause electroreduction and electromigration along extended defects in the crystals.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Psiuk, B.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Pilch, M.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
700 1 _ |a Szot, K.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB2799
773 _ _ |0 PERI:(DE-600)1398311-8
|a 10.1007/s00339-009-5240-0
|g Vol. 97, p. 449 - 454
|p 449 - 454
|q 97<449 - 454
|t Applied physics / A
|v 97
|x 0947-8396
|y 2009
856 7 _ |u http://dx.doi.org/10.1007/s00339-009-5240-0
909 C O |o oai:juser.fz-juelich.de:6489
|p VDB
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2009
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
920 1 _ |d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)114796
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB881


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21