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@ARTICLE{Breuer:807757,
author = {Breuer, Thomas and Nielen, Lutz and Roesgen, Bernd and
Waser, Rainer and Rana, Vikas and Linn, Eike},
title = {{R}ealization of {M}inimum and {M}aximum {G}ate {F}unction
in {T}a$_{2}${O}$_{5}$-based {M}emristive {D}evices},
journal = {Scientific reports},
volume = {6},
issn = {2045-2322},
address = {London},
publisher = {Nature Publishing Group},
reportid = {FZJ-2016-02175},
pages = {23967 -},
year = {2016},
abstract = {Redox-based resistive switching devices (ReRAM) are
considered key enablers for future non-volatile memory and
logic applications. Functionally enhanced ReRAM devices
could enable new hardware concepts, e.g. logic-in-memory or
neuromorphic applications. In this work, we demonstrate the
implementation of ReRAM-based fuzzy logic gates using Ta2O5
devices to enable analogous Minimum and Maximum operations.
The realized gates consist of two anti-serially connected
ReRAM cells offering two inputs and one output. The cells
offer an endurance up to 106 cycles. By means of exemplary
input signals, each gate functionality is verified and
signal constraints are highlighted. This realization could
improve the efficiency of analogous processing tasks such as
sorting networks in the future.},
cin = {PGI-7 / JARA-FIT / PGI-10},
ddc = {000},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-10-20170113},
pnm = {524 - Controlling Collective States (POF3-524)},
pid = {G:(DE-HGF)POF3-524},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000373372300002},
doi = {10.1038/srep23967},
url = {https://juser.fz-juelich.de/record/807757},
}