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| Home > Publications database > Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices |
| Journal Article | FZJ-2016-02175 |
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2016
Nature Publishing Group
London
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Please use a persistent id in citations: http://hdl.handle.net/2128/10148 doi:10.1038/srep23967
Abstract: Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementation of ReRAM-based fuzzy logic gates using Ta2O5 devices to enable analogous Minimum and Maximum operations. The realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output. The cells offer an endurance up to 106 cycles. By means of exemplary input signals, each gate functionality is verified and signal constraints are highlighted. This realization could improve the efficiency of analogous processing tasks such as sorting networks in the future.
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