%0 Journal Article
%A Smirnov, V.
%A Lambertz, Andreas
%A Moll, Sandra
%A Bär, M.
%A Starr, D. E.
%A Wilks, R. G.
%A Gorgoi, M.
%A Heidt, Anna
%A Luysberg, Martina
%A Holländer, Bernhard
%A Finger, Friedhelm
%T Doped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques
%J Physica status solidi / A
%V 213
%N 7
%@ 1862-6300
%C Weinheim
%I Wiley-VCH
%M FZJ-2016-02626
%P 1814 - 1820
%D 2016
%X Doped microcrystalline silicon oxide (μc-SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various advanced characterization methods, we have studied the relationship between optoelectronic properties, chemical composition, and structure of p-type µc-SiOx:H deposited by plasma enhanced chemical vapor deposition (PECVD). For a wide range of compositions with varying oxygen content, we show that the dominant components are Si and a-SiO2, while the fraction of suboxides is minor. The μc-SiOx:H material with sufficient oxygen content (x = 0.35) exhibits an enlarged optical gap E04 > 2.2 eV and sufficiently high dark conductivity >10−6 S cm−1; the crystalline silicon fraction has a filament-like shape (with a typical width of around 10 nm) forming a branch-like structure elongated in the growth direction over several hundreds of nanometers
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000385222900024
%R 10.1002/pssa.201533022
%U https://juser.fz-juelich.de/record/809697