Journal Article

FZJ-2016-02626

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Doped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques

Smirnov, V. (Corresponding author)FZJ* ; Lambertz, A.FZJ* ; Moll, S.FZJ* ; Bär, M. ; Starr, D. E. ; Wilks, R. G. ; Gorgoi, M. ; Heidt, A. ; Luysberg, M.FZJ* ; Holländer, B. ; Finger, F.FZJ*

2016
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssa.201533022

Abstract: Doped microcrystalline silicon oxide (μc-SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various advanced characterization methods, we have studied the relationship between optoelectronic properties, chemical composition, and structure of p-type µc-SiOx:H deposited by plasma enhanced chemical vapor deposition (PECVD). For a wide range of compositions with varying oxygen content, we show that the dominant components are Si and a-SiO2, while the fraction of suboxides is minor. The μc-SiOx:H material with sufficient oxygen content (x = 0.35) exhibits an enlarged optical gap E04 > 2.2 eV and sufficiently high dark conductivity >10−6 S cm−1; the crystalline silicon fraction has a filament-like shape (with a typical width of around 10 nm) forming a branch-like structure elongated in the growth direction over several hundreds of nanometers

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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