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000809697 1001_ $$0P:(DE-Juel1)130297$$aSmirnov, V.$$b0$$eCorresponding author$$ufzj
000809697 245__ $$aDoped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques
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000809697 520__ $$aDoped microcrystalline silicon oxide (μc-SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various advanced characterization methods, we have studied the relationship between optoelectronic properties, chemical composition, and structure of p-type µc-SiOx:H deposited by plasma enhanced chemical vapor deposition (PECVD). For a wide range of compositions with varying oxygen content, we show that the dominant components are Si and a-SiO2, while the fraction of suboxides is minor. The μc-SiOx:H material with sufficient oxygen content (x = 0.35) exhibits an enlarged optical gap E04 > 2.2 eV and sufficiently high dark conductivity >10−6 S cm−1; the crystalline silicon fraction has a filament-like shape (with a typical width of around 10 nm) forming a branch-like structure elongated in the growth direction over several hundreds of nanometers
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000809697 7001_ $$0P:(DE-Juel1)130263$$aLambertz, Andreas$$b1$$ufzj
000809697 7001_ $$0P:(DE-Juel1)130269$$aMoll, Sandra$$b2$$ufzj
000809697 7001_ $$0P:(DE-HGF)0$$aBär, M.$$b3
000809697 7001_ $$0P:(DE-HGF)0$$aStarr, D. E.$$b4
000809697 7001_ $$0P:(DE-HGF)0$$aWilks, R. G.$$b5
000809697 7001_ $$0P:(DE-HGF)0$$aGorgoi, M.$$b6
000809697 7001_ $$0P:(DE-Juel1)130248$$aHeidt, Anna$$b7
000809697 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, Martina$$b8$$ufzj
000809697 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b9
000809697 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b10$$ufzj
000809697 773__ $$0PERI:(DE-600)1481091-8$$a10.1002/pssa.201533022$$gVol. 213, no. 7, p. 1814 - 1820$$n7$$p1814 - 1820$$tPhysica status solidi / A$$v213$$x1862-6300$$y2016
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