TY  - JOUR
AU  - Smirnov, V.
AU  - Lambertz, Andreas
AU  - Moll, Sandra
AU  - Bär, M.
AU  - Starr, D. E.
AU  - Wilks, R. G.
AU  - Gorgoi, M.
AU  - Heidt, Anna
AU  - Luysberg, Martina
AU  - Holländer, Bernhard
AU  - Finger, Friedhelm
TI  - Doped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques
JO  - Physica status solidi / A
VL  - 213
IS  - 7
SN  - 1862-6300
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2016-02626
SP  - 1814 - 1820
PY  - 2016
AB  - Doped microcrystalline silicon oxide (μc-SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various advanced characterization methods, we have studied the relationship between optoelectronic properties, chemical composition, and structure of p-type µc-SiOx:H deposited by plasma enhanced chemical vapor deposition (PECVD). For a wide range of compositions with varying oxygen content, we show that the dominant components are Si and a-SiO2, while the fraction of suboxides is minor. The μc-SiOx:H material with sufficient oxygen content (x = 0.35) exhibits an enlarged optical gap E04 > 2.2 eV and sufficiently high dark conductivity >10−6 S cm−1; the crystalline silicon fraction has a filament-like shape (with a typical width of around 10 nm) forming a branch-like structure elongated in the growth direction over several hundreds of nanometers
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000385222900024
DO  - DOI:10.1002/pssa.201533022
UR  - https://juser.fz-juelich.de/record/809697
ER  -