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| 100 | 1 | _ | |a Smirnov, V. |0 P:(DE-Juel1)130297 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Doped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques |
| 260 | _ | _ | |a Weinheim |c 2016 |b Wiley-VCH |
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| 520 | _ | _ | |a Doped microcrystalline silicon oxide (μc-SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various advanced characterization methods, we have studied the relationship between optoelectronic properties, chemical composition, and structure of p-type µc-SiOx:H deposited by plasma enhanced chemical vapor deposition (PECVD). For a wide range of compositions with varying oxygen content, we show that the dominant components are Si and a-SiO2, while the fraction of suboxides is minor. The μc-SiOx:H material with sufficient oxygen content (x = 0.35) exhibits an enlarged optical gap E04 > 2.2 eV and sufficiently high dark conductivity >10−6 S cm−1; the crystalline silicon fraction has a filament-like shape (with a typical width of around 10 nm) forming a branch-like structure elongated in the growth direction over several hundreds of nanometers |
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| 700 | 1 | _ | |a Gorgoi, M. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Heidt, Anna |0 P:(DE-Juel1)130248 |b 7 |
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| 773 | _ | _ | |a 10.1002/pssa.201533022 |g Vol. 213, no. 7, p. 1814 - 1820 |0 PERI:(DE-600)1481091-8 |n 7 |p 1814 - 1820 |t Physica status solidi / A |v 213 |y 2016 |x 1862-6300 |
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