%0 Book Section
%A Hardtdegen, H.
%A Bugge, F.
%T Chemical Vapor Epitaxy of Al$_{x}$Ga$_{1-x}$As
%C Amsterdam
%I Elsevier
%M FZJ-2016-03308
%P 1-6
%D 2016
%< http://invenio-wiki.gsi.de/cgi-bin/view/Main/29510a#FZJ_fontReference Module in Materials Science and Materials Engineering / Hardtdegen, H.  ;  : Elsevier, 2016,  ; ISBN: 9780128035818 ; doi:10.1016/B978-0-12-803581-8.02013-0
%X A short overview about the growth chemistry of AlxGa1-xAs in the MOVPE process is given. Basic knowledge is necessary to understand the influence of growth parameters on GaAs and AlxGa1-xAs layer characteristics. Mainly the group III to group V partial pressure ratio and the growth temperature determine the quality of the bulk layers deposited. The optimal growth temperature window for AlxGa1-xAs is different in comparison to that for GaAs. A higher growth temperature is used if the AlxGa1-xAs quality is essential, and a lower temperature is used when the device structure requires abrupt interfaces.
%F PUB:(DE-HGF)7
%9 Contribution to a book
%R 10.1016/B978-0-12-803581-8.02013-0
%U https://juser.fz-juelich.de/record/810711