Contribution to a book

FZJ-2016-03308

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical Vapor Epitaxy of Al$_{x}$Ga$_{1-x}$As

Hardtdegen, H.FZJ* ; Bugge, F. (Corresponding author)Extern*

2016
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/B978-0-12-803581-8.02013-0

Abstract: A short overview about the growth chemistry of AlxGa1-xAs in the MOVPE process is given. Basic knowledge is necessary to understand the influence of growth parameters on GaAs and AlxGa1-xAs layer characteristics. Mainly the group III to group V partial pressure ratio and the growth temperature determine the quality of the bulk layers deposited. The optimal growth temperature window for AlxGa1-xAs is different in comparison to that for GaAs. A higher growth temperature is used if the AlxGa1-xAs quality is essential, and a lower temperature is used when the device structure requires abrupt interfaces.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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