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000810711 1001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b0$$ufzj
000810711 245__ $$aChemical Vapor Epitaxy of Al$_{x}$Ga$_{1-x}$As
000810711 260__ $$aAmsterdam$$bElsevier$$c2016
000810711 29510 $$ahttp://invenio-wiki.gsi.de/cgi-bin/view/Main/29510a#FZJ_fontReference Module in Materials Science and Materials Engineering / Hardtdegen, H.  ;  : Elsevier, 2016,  ; ISBN: 9780128035818 ; doi:10.1016/B978-0-12-803581-8.02013-0
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000810711 520__ $$aA short overview about the growth chemistry of AlxGa1-xAs in the MOVPE process is given. Basic knowledge is necessary to understand the influence of growth parameters on GaAs and AlxGa1-xAs layer characteristics. Mainly the group III to group V partial pressure ratio and the growth temperature determine the quality of the bulk layers deposited. The optimal growth temperature window for AlxGa1-xAs is different in comparison to that for GaAs. A higher growth temperature is used if the AlxGa1-xAs quality is essential, and a lower temperature is used when the device structure requires abrupt interfaces.
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000810711 7001_ $$0P:(DE-HGF)0$$aBugge, F.$$b1$$eCorresponding author
000810711 773__ $$a10.1016/B978-0-12-803581-8.02013-0
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