TY  - CHAP
AU  - Hardtdegen, H.
AU  - Bugge, F.
TI  - Chemical Vapor Epitaxy of Al$_{x}$Ga$_{1-x}$As
CY  - Amsterdam
PB  - Elsevier
M1  - FZJ-2016-03308
SP  - 1-6
PY  - 2016
AB  - A short overview about the growth chemistry of AlxGa1-xAs in the MOVPE process is given. Basic knowledge is necessary to understand the influence of growth parameters on GaAs and AlxGa1-xAs layer characteristics. Mainly the group III to group V partial pressure ratio and the growth temperature determine the quality of the bulk layers deposited. The optimal growth temperature window for AlxGa1-xAs is different in comparison to that for GaAs. A higher growth temperature is used if the AlxGa1-xAs quality is essential, and a lower temperature is used when the device structure requires abrupt interfaces.
LB  - PUB:(DE-HGF)7
DO  - DOI:10.1016/B978-0-12-803581-8.02013-0
UR  - https://juser.fz-juelich.de/record/810711
ER  -