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| 001 | 810711 | ||
| 005 | 20210129223509.0 | ||
| 024 | 7 | _ | |a 10.1016/B978-0-12-803581-8.02013-0 |2 doi |
| 037 | _ | _ | |a FZJ-2016-03308 |
| 100 | 1 | _ | |a Hardtdegen, H. |0 P:(DE-Juel1)125593 |b 0 |u fzj |
| 245 | _ | _ | |a Chemical Vapor Epitaxy of Al$_{x}$Ga$_{1-x}$As |
| 260 | _ | _ | |a Amsterdam |c 2016 |b Elsevier |
| 295 | 1 | 0 | |a http://invenio-wiki.gsi.de/cgi-bin/view/Main/29510a#FZJ_fontReference Module in Materials Science and Materials Engineering / Hardtdegen, H. ; : Elsevier, 2016, ; ISBN: 9780128035818 ; doi:10.1016/B978-0-12-803581-8.02013-0 |
| 300 | _ | _ | |a 1-6 |
| 336 | 7 | _ | |a BOOK_CHAPTER |2 ORCID |
| 336 | 7 | _ | |a Book Section |0 7 |2 EndNote |
| 336 | 7 | _ | |a bookPart |2 DRIVER |
| 336 | 7 | _ | |a INBOOK |2 BibTeX |
| 336 | 7 | _ | |a Output Types/Book chapter |2 DataCite |
| 336 | 7 | _ | |a Contribution to a book |b contb |m contb |0 PUB:(DE-HGF)7 |s 1467707520_2695 |2 PUB:(DE-HGF) |
| 520 | _ | _ | |a A short overview about the growth chemistry of AlxGa1-xAs in the MOVPE process is given. Basic knowledge is necessary to understand the influence of growth parameters on GaAs and AlxGa1-xAs layer characteristics. Mainly the group III to group V partial pressure ratio and the growth temperature determine the quality of the bulk layers deposited. The optimal growth temperature window for AlxGa1-xAs is different in comparison to that for GaAs. A higher growth temperature is used if the AlxGa1-xAs quality is essential, and a lower temperature is used when the device structure requires abrupt interfaces. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef Book |
| 700 | 1 | _ | |a Bugge, F. |0 P:(DE-HGF)0 |b 1 |e Corresponding author |
| 773 | _ | _ | |a 10.1016/B978-0-12-803581-8.02013-0 |
| 909 | C | O | |o oai:juser.fz-juelich.de:810711 |p VDB |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2016 |
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| 980 | _ | _ | |a UNRESTRICTED |
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