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@ARTICLE{Voigtlnder:810925,
      author       = {Voigtländer, Bert and Cherepanov, Vasily and Coenen,
                      Peter},
      title        = {{T}he {M}ultimeter at the {N}anoscale},
      journal      = {Vakuum in Forschung und Praxis},
      volume       = {28},
      number       = {3},
      issn         = {0947-076X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2016-03491},
      pages        = {38 - 42},
      year         = {2016},
      abstract     = {A multi-tip scanning tunneling microscope (STM)
                      specifically designed for charge transport measurements at
                      the nanoscale is described. Complementing the instrument
                      with a versatile measurement electronics creates a powerful
                      tool to give insight into fundamental transport properties
                      at the nanoscale. We demonstrate the capabilities of the
                      instrument by measuring resistance profiles along
                      freestanding GaAs nanowires, by the acquisition of nanoscale
                      potential maps, and by the identification of an anisotropy
                      in the surface conductivity at a silicon surface.},
      cin          = {PGI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000385939600017},
      doi          = {10.1002/vipr.201600605},
      url          = {https://juser.fz-juelich.de/record/810925},
}