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| Home > Publications database > Dark signal performance of different SiPM technologies under irradiation with cold neutrons |
| Poster (Other) | FZJ-2016-03820 |
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2016
Abstract: The world-wide shortage of 3He gas has triggered research on novel approaches for thermal and cold neutron detection such as the development of scintillation based detectors to be used in small angle neutron scattering (SANS) experiments. In order to improve the neutron count rates by simplifying the detector readout algorithms and simultaneously increase the detectors space resolution, in SANS instruments requiring detectors with active areas up to 1 m² pixelated scintillator detectors could be the new way to proceed. Here, each detector “pixel” would have the size directly matching the required space resolution. An interesting candidate for the photodetector part in these detectors could be an array of silicon photomultipliers (SiPM), either analog or digital. It would yield the possibility of single photon counting, low power consumption, an acceptable space resolution, neutron counting rates much higher than those achieved by current 3He based detectors, and the complete insensitivity to magnetic fields up to several Tesla. The main risk defined so far is the radiation hardness of SiPM arrays considering thermal or cold neutron irradiation. We investigated the dark signal and breakdown voltage performances of three SiPM technologies, two analog ones and one based on digital counting of avalanche events, both with and without a scintillator material covering the following photodetector arrays: SensL Series C 12x12 ArrayC-30035-144P, Hamamatsu 8 × 8 MPPC array S12642-0808PB-50, and Philips DPC3200-44-22 module. We irradiated the photodetector arrays under test with cold neutrons (lambda_n = 5 Å) at the KWS-1 instrument of the Heinz Maier Leibnitz Zentrum in Garching, Germany, up to a dose of 6E12 n·cm-2. The SiPM detectors were at all times fully operational, and the measurements were performed in-situ. In this work we present the results of the breakdown voltage, dark signal, and gain factor characterization of those SiPM arrays before and after the irradiation.
Keyword(s): Key Technologies (1st) ; Instrument and Method Development (2nd)
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