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000811570 1001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b0$$eCorresponding author
000811570 245__ $$aNano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
000811570 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2016
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000811570 520__ $$aVertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
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000811570 7001_ $$0P:(DE-HGF)0$$aWinden, Andreas$$b1
000811570 7001_ $$0P:(DE-HGF)0$$aMarso, Michel$$b2
000811570 7001_ $$0P:(DE-HGF)0$$aMoonshiram, Anusha$$b3
000811570 7001_ $$0P:(DE-Juel1)128608$$aLüth, Hans$$b4
000811570 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5
000811570 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b6
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