Journal Article

FZJ-2016-04012

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics

Mikulics, M. (Corresponding author)FZJ* ; Winden, A. ; Marso, M.Extern* ; Moonshiram, A. ; Lüth, H.FZJ* ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17301  doi:10.1063/1.4960007

Abstract: Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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