TY  - JOUR
AU  - Mikulics, Martin
AU  - Winden, Andreas
AU  - Marso, Michel
AU  - Moonshiram, Anusha
AU  - Lüth, Hans
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
JO  - Applied physics letters
VL  - 109
IS  - 4
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2016-04012
SP  - 161851
PY  - 2016
AB  - Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000381688900003
DO  - DOI:10.1063/1.4960007
UR  - https://juser.fz-juelich.de/record/811570
ER  -