% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mikulics:811570,
      author       = {Mikulics, Martin and Winden, Andreas and Marso, Michel and
                      Moonshiram, Anusha and Lüth, Hans and Grützmacher, Detlev
                      and Hardtdegen, Hilde},
      title        = {{N}ano-light-emitting-diodes based on {I}n{G}a{N}
                      mesoscopic structures for energy saving optoelectronics},
      journal      = {Applied physics letters},
      volume       = {109},
      number       = {4},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-04012},
      pages        = {161851},
      year         = {2016},
      abstract     = {Vertically integrated III-nitride based nano-LEDs (light
                      emitting diodes) were designed and fabricated for operation
                      in the telecommunication wavelength range in the
                      (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge
                      luminescence energy of the nano-LEDs could be engineered by
                      tuning the composition and size of the InGaN mesoscopic
                      structures. Narrow band edge photoluminescence and
                      electroluminescence were observed. Our mesoscopic InGaN
                      structures (depending on diameter) feature a very low power
                      consumption in the range between 2 nWand 30 nW. The
                      suitability of the technological process for the long-term
                      operation of LEDs is demonstrated by reliability
                      measurements. The optical and electrical characterization
                      presented show strong potential for future low energy
                      consumption optoelectronics.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000381688900003},
      doi          = {10.1063/1.4960007},
      url          = {https://juser.fz-juelich.de/record/811570},
}