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@ARTICLE{Guenduez:811656,
author = {Guenduez, Deniz and Tankut, Aydin and Sedani, Salar and
Karaman, Mehmet and Turan, Rasit},
title = {{C}rystallization and phase separation mechanism of silicon
oxide thin films fabricated via e-beam evaporation of
silicon monoxide},
journal = {Physica status solidi / C},
volume = {12},
number = {9-11},
issn = {1862-6351},
address = {Berlin},
publisher = {Wiley-VCH},
reportid = {FZJ-2016-04046},
pages = {1229 - 1235},
year = {2015},
abstract = {In this work, silicon oxide thin films were synthesizedvia
e-beam evaporation of silicon monoxide. Subsequentannealing
experiments were carried out to induce Sinanocrystals (Si
NCs) formation. A broad range of annealingdurations and
temperatures were studied. Ramanspectroscopy, X-ray
photoelectron spectroscopy (XPS)and Fourier Transform
Infrared Spectroscopy (FTIR)were employed to study the
mechanism of phase separationin silicon oxide films and
crystallization of Si.Raman spectroscopy results show that
SiO cannot beconsidered as a composite mixture of Si and
SiO2. Resultssuggest that phase separation and
crystallization aretwo separate processes even at relatively
high temperatures.Amorphous Si formation was observed at
annealingtemperatures as low as 800 ◦C. A minimum
annealingtemperature of between 800 and 900 ◦C is
requiredto form Si NCs. XPS results show a strong phase
separationat annealing temperature of 1100 ◦C.},
cin = {IEK-9},
ddc = {530},
cid = {I:(DE-Juel1)IEK-9-20110218},
pnm = {131 - Electrochemical Storage (POF3-131) / HITEC -
Helmholtz Interdisciplinary Doctoral Training in Energy and
Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-131 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000372057300008},
doi = {10.1002/pssc.201510114},
url = {https://juser.fz-juelich.de/record/811656},
}