Journal Article

FZJ-2016-04068

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic Properties of Complex Self-Assembled InAs Nanowire Networks

Heedt, S. (Corresponding author)FZJ* ; Vakulov, D.FZJ* ; Rieger, T.FZJ* ; Rosenbach, D.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ* ; Schäpers, T.FZJ*

2016
Wiley Chichester

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/aelm.201500460

Abstract: Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field-effect transistor characterizations.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; No Authors Fulltext ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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