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@ARTICLE{Lanius:811698,
      author       = {Lanius, Martin and Kampmeier, Jörn and Weyrich, Christian
                      and Kölling, Sebastian and Schall, Melissa and
                      Schüffelgen, Peter and Neumann, Elmar and Luysberg, Martina
                      and Mussler, Gregor and Koenraad, Paul M. and Schäpers,
                      Thomas and Grützmacher, Detlev},
      title        = {{P}–{N} {J}unctions in {U}ltrathin {T}opological
                      {I}nsulator {S}b 2 {T}e 3 /{B}i 2 {T}e 3 {H}eterostructures
                      {G}rown by {M}olecular {B}eam {E}pitaxy},
      journal      = {Crystal growth $\&$ design},
      volume       = {16},
      number       = {4},
      issn         = {1528-7505},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2016-04082},
      pages        = {2057 - 2061},
      year         = {2016},
      abstract     = {We fabricated topological insulating Sb2Te3/Bi2Te3 p–n
                      heterostructures by means of molecular beam epitaxy and
                      characterized the topography of the films by scanning
                      tunneling microscopy. Due to the van der Waals growth mode
                      of the layered Te compounds, X-ray diffraction measurements
                      show that the heterostructure is fully relaxed on the
                      Si(111) substrate. Furthermore, scanning transmission
                      electron microscopy measurements unveil the crystalline
                      structure of the p–n interface. Energy dispersive X-ray
                      spectroscopy and atom probe tomography enable the mapping of
                      the chemical element distribution. We conclude that a
                      diffusion of Sb and Bi during growth causes the formation of
                      ternary compounds. In addition a Sb and Te accumulation at
                      the substrate interface could be detected. Transport
                      measurements prove the tunability of the carrier
                      concentration via thickness variation of the p–n
                      heterostructure.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000373747700035},
      doi          = {10.1021/acs.cgd.5b01717},
      url          = {https://juser.fz-juelich.de/record/811698},
}