Journal Article

FZJ-2016-04086

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures

Zhukov, A. A. (Corresponding author) ; Volk, C.FZJ* ; Winden, A. ; Hardtdegen, H.FZJ* ; Schäpers, T.FZJ*

2014
Springer Heidelberg [u.a.]

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Please use a persistent id in citations: doi:10.1134/S0021364014130128

Abstract: A set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at liquid helium temperatures in the presence of a charged atomic-force microscope tip has been presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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