000811702 001__ 811702
000811702 005__ 20210129223917.0
000811702 0247_ $$2doi$$a10.1134/S0021364014130128
000811702 0247_ $$2ISSN$$a0021-3640
000811702 0247_ $$2ISSN$$a1090-6487
000811702 0247_ $$2WOS$$aWOS:000342148100007
000811702 0247_ $$2altmetric$$aaltmetric:2395879
000811702 037__ $$aFZJ-2016-04086
000811702 082__ $$a530
000811702 1001_ $$0P:(DE-HGF)0$$aZhukov, A. A.$$b0$$eCorresponding author
000811702 245__ $$aInvestigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures
000811702 260__ $$aHeidelberg [u.a.]$$bSpringer$$c2014
000811702 3367_ $$2DRIVER$$aarticle
000811702 3367_ $$2DataCite$$aOutput Types/Journal article
000811702 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1470057896_28385
000811702 3367_ $$2BibTeX$$aARTICLE
000811702 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000811702 3367_ $$00$$2EndNote$$aJournal Article
000811702 520__ $$aA set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at liquid helium temperatures in the presence of a charged atomic-force microscope tip has been presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.
000811702 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000811702 588__ $$aDataset connected to CrossRef
000811702 7001_ $$0P:(DE-HGF)0$$aVolk, Chr.$$b1
000811702 7001_ $$0P:(DE-Juel1)144014$$aWinden, A.$$b2
000811702 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b3
000811702 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Th.$$b4
000811702 773__ $$0PERI:(DE-600)1472906-4$$a10.1134/S0021364014130128$$gVol. 100, no. 1, p. 32 - 38$$n1$$p32 - 38$$tJETP letters$$v100$$x1090-6487$$y2014
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.pdf$$yRestricted
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.gif?subformat=icon$$xicon$$yRestricted
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.jpg?subformat=icon-180$$xicon-180$$yRestricted
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.jpg?subformat=icon-640$$xicon-640$$yRestricted
000811702 8564_ $$uhttps://juser.fz-juelich.de/record/811702/files/art_10.1134_S0021364014130128.pdf?subformat=pdfa$$xpdfa$$yRestricted
000811702 909CO $$ooai:juser.fz-juelich.de:811702$$pVDB
000811702 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b1$$kFZJ
000811702 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich$$b3$$kFZJ
000811702 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich$$b4$$kFZJ
000811702 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000811702 9141_ $$y2016
000811702 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bJETP LETT+ : 2014
000811702 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000811702 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000811702 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000811702 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000811702 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000811702 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000811702 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000811702 920__ $$lyes
000811702 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000811702 980__ $$ajournal
000811702 980__ $$aVDB
000811702 980__ $$aI:(DE-Juel1)PGI-9-20110106
000811702 980__ $$aUNRESTRICTED