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| Hauptseite > Publikationsdatenbank > Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures > print |
| Hauptseite > Publikationsdatenbank > Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures > print |
| 001 | 811702 | ||
| 005 | 20210129223917.0 | ||
| 024 | 7 | _ | |a 10.1134/S0021364014130128 |2 doi |
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| 100 | 1 | _ | |a Zhukov, A. A. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures |
| 260 | _ | _ | |a Heidelberg [u.a.] |c 2014 |b Springer |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a A set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at liquid helium temperatures in the presence of a charged atomic-force microscope tip has been presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves. |
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| 773 | _ | _ | |a 10.1134/S0021364014130128 |g Vol. 100, no. 1, p. 32 - 38 |0 PERI:(DE-600)1472906-4 |n 1 |p 32 - 38 |t JETP letters |v 100 |y 2014 |x 1090-6487 |
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