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000818146 1001_ $$0P:(DE-Juel1)130677$$aGunkel, F.$$b0$$eCorresponding author$$ufzj
000818146 245__ $$aDefect Control of Conventional and Anomalous Electron Transport at Complex Oxide Interfaces
000818146 260__ $$aCollege Park, Md.$$bAPS$$c2016
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000818146 520__ $$aUsing low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO3/SrTiO3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10  K. Considering these two sources of nonlinearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. The most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration
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000818146 7001_ $$0P:(DE-HGF)0$$aBell, Chris$$b1
000818146 7001_ $$0P:(DE-HGF)0$$aInoue, Hisashi$$b2
000818146 7001_ $$0P:(DE-HGF)0$$aKim, Bongju$$b3
000818146 7001_ $$0P:(DE-HGF)0$$aSwartz, Adrian G.$$b4
000818146 7001_ $$0P:(DE-HGF)0$$aMerz, Tyler A.$$b5
000818146 7001_ $$0P:(DE-HGF)0$$aHikita, Yasuyuki$$b6
000818146 7001_ $$0P:(DE-HGF)0$$aHarashima, Satoshi$$b7
000818146 7001_ $$0P:(DE-HGF)0$$aSato, Hiroki K.$$b8
000818146 7001_ $$0P:(DE-HGF)0$$aMinohara, Makoto$$b9
000818146 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b10
000818146 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b11
000818146 7001_ $$0P:(DE-HGF)0$$aHwang, Harold Y.$$b12
000818146 773__ $$0PERI:(DE-600)2622565-7$$a10.1103/PhysRevX.6.031035$$gVol. 6, no. 3, p. 031035$$n3$$p031035$$tPhysical review / X$$v6$$x2160-3308$$y2016
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