Journal Article

FZJ-2016-04662

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Defect Control of Conventional and Anomalous Electron Transport at Complex Oxide Interfaces

Gunkel, F. (Corresponding author)FZJ* ; Bell, C. ; Inoue, H. ; Kim, B. ; Swartz, A. G. ; Merz, T. A. ; Hikita, Y. ; Harashima, S. ; Sato, H. K. ; Minohara, M. ; Hoffmann-Eifert, S.FZJ* ; Dittmann, R.FZJ* ; Hwang, H. Y.

2016
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/12271  doi:10.1103/PhysRevX.6.031035

Abstract: Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO3/SrTiO3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10  K. Considering these two sources of nonlinearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. The most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; ; ; ; Current Contents - Physical, Chemical and Earth Sciences ; DOAJ Seal ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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