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@ARTICLE{Gunkel:818146,
      author       = {Gunkel, F. and Bell, Chris and Inoue, Hisashi and Kim,
                      Bongju and Swartz, Adrian G. and Merz, Tyler A. and Hikita,
                      Yasuyuki and Harashima, Satoshi and Sato, Hiroki K. and
                      Minohara, Makoto and Hoffmann-Eifert, Susanne and Dittmann,
                      Regina and Hwang, Harold Y.},
      title        = {{D}efect {C}ontrol of {C}onventional and {A}nomalous
                      {E}lectron {T}ransport at {C}omplex {O}xide {I}nterfaces},
      journal      = {Physical review / X},
      volume       = {6},
      number       = {3},
      issn         = {2160-3308},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2016-04662},
      pages        = {031035},
      year         = {2016},
      abstract     = {Using low-temperature electrical measurements, the
                      interrelation between electron transport, magnetic
                      properties, and ionic defect structure in complex oxide
                      interface systems is investigated, focusing on NdGaO3/SrTiO3
                      (100) interfaces. Field-dependent Hall characteristics
                      (2–300 K) are obtained for samples grown at various growth
                      pressures. In addition to multiple electron transport,
                      interfacial magnetism is tracked exploiting the anomalous
                      Hall effect (AHE). These two properties both contribute to a
                      nonlinearity in the field dependence of the Hall resistance,
                      with multiple carrier conduction evident below 30 K and AHE
                      at temperatures ≲10  K. Considering these two sources
                      of nonlinearity, we suggest a phenomenological model
                      capturing the complex field dependence of the Hall
                      characteristics in the low-temperature regime. Our model
                      allows the extraction of the conventional transport
                      parameters and a qualitative analysis of the magnetization.
                      The electron mobility is found to decrease systematically
                      with increasing growth pressure. This suggests dominant
                      electron scattering by acceptor-type strontium vacancies
                      incorporated during growth. The AHE scales with growth
                      pressure. The most pronounced AHE is found at increased
                      growth pressure and, thus, in the most defective,
                      low-mobility samples, indicating a correlation between
                      transport, magnetism, and cation defect concentration},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000382177500001},
      doi          = {10.1103/PhysRevX.6.031035},
      url          = {https://juser.fz-juelich.de/record/818146},
}