Modelling of Nucleation and Growth Processes for Silicon-Compatible Microelectronics

CoordinatorDabrowski, Jarek
Grant period2010-11-01 - 2019-10-31
Funding bodyNIC
IdentifierG:(DE-Juel1)hfo06_20101101

Ab initio investigation of materials for modern microelectronics   Modelling of Nucleation and Growth Processes for Silicon-Compatible Microelectronics

Note: JSC computation time grant
 

Recent Publications

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;
About the influence of deposited nitride layers on oxide precipitation after RTA pre-treatment
Physica status solidi / A 214(7), 1700236 - () [10.1002/pssa.201700236] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;
Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon
Journal of crystal growth 468, 424 - 432 () [10.1016/j.jcrysgro.2016.10.073] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates
ACS applied materials & interfaces 8(49), 33786 - 33793 () [10.1021/acsami.6b11397] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;
Growth of ScN(111) on Sc$_2$O$_3$(111) for GaN integration on Si(111): Experiment and ab-initio calculations
Journal of applied physics 120(13), 135103 - () [10.1063/1.4963826] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Understanding the growth mechanism of graphene on Ge/Si(001) surfaces
Scientific reports 6(1), 31639 () [10.1038/srep31639] DBCoverage BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book  ;  ;
Ab Initio modeling of Graphene Nucleation and Growth, in Low-Dimensional and Nanostructured Materials and Devices
[Ebook] Low-Dimensional and Nanostructured Materials and Devices : Properties, Synthesis, Characterization, Modelling and Applications / Ünlü, Hilmi ; Horing, Norman J. M. ; Dabowski, Jaroslaw 1st ed. 2016, Cham : Springer International Publishing, 2015, Cham : Springer International Publishing, NanoScience and Technology : 1st ed. 2016, Online-Ressource (688 p) () [10.1007/978-3-319-25340-4] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;
(Invited) Initial State of Graphene Growth on Ge(001) Surfaces
ECS transactions 69(5), 345 - 356 () [10.1149/06905.0345ecst] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;
Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations
Physical review / B 92(14), 144104 () [10.1103/PhysRevB.92.144104] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Graphene grown on Ge(001) from atomic source
Carbon 75, 104 - 112 () [10.1016/j.carbon.2014.03.042] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;
Simulation of vacancy agglomeration based on ab initio calculations and comparison with experimental results
Japanese journal of applied physics 53(5S1), 05FJ06 - () [10.7567/JJAP.53.05FJ06] BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 


 Record created 2016-09-21, last modified 2020-09-21



Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)