| Coordinator | Dabrowski, Jarek |
| Grant period | 2010-11-01 - 2019-10-31 |
| Funding body | NIC |
| Identifier | G:(DE-Juel1)hfo06_20101101 |
⇦ Ab initio investigation of materials for modern microelectronics Modelling of Nucleation and Growth Processes for Silicon-Compatible Microelectronics ⇨
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Journal Article
About the influence of deposited nitride layers on oxide precipitation after RTA pre-treatment
Physica status solidi / A 214(7), 1700236 - (2017) [10.1002/pssa.201700236]
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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon
Journal of crystal growth 468, 424 - 432 (2017) [10.1016/j.jcrysgro.2016.10.073]
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Journal Article
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates
ACS applied materials & interfaces 8(49), 33786 - 33793 (2016) [10.1021/acsami.6b11397]
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Growth of ScN(111) on Sc$_2$O$_3$(111) for GaN integration on Si(111): Experiment and ab-initio calculations
Journal of applied physics 120(13), 135103 - (2016) [10.1063/1.4963826]
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Understanding the growth mechanism of graphene on Ge/Si(001) surfaces
Scientific reports 6(1), 31639 (2016) [10.1038/srep31639]
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Contribution to a book
Ab Initio modeling of Graphene Nucleation and Growth, in Low-Dimensional and Nanostructured Materials and Devices
[Ebook] Low-Dimensional and Nanostructured Materials and Devices : Properties, Synthesis, Characterization, Modelling and Applications / Ünlü, Hilmi ; Horing, Norman J. M. ; Dabowski, Jaroslaw 1st ed. 2016, Cham : Springer International Publishing, 2015,
Cham : Springer International Publishing, NanoScience and Technology : 1st ed. 2016, Online-Ressource (688 p) (2016) [10.1007/978-3-319-25340-4]
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Journal Article
(Invited) Initial State of Graphene Growth on Ge(001) Surfaces
ECS transactions 69(5), 345 - 356 (2015) [10.1149/06905.0345ecst]
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Journal Article
Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations
Physical review / B 92(14), 144104 (2015) [10.1103/PhysRevB.92.144104]
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Graphene grown on Ge(001) from atomic source
Carbon 75, 104 - 112 (2014) [10.1016/j.carbon.2014.03.042]
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Simulation of vacancy agglomeration based on ab initio calculations and comparison with experimental results
Japanese journal of applied physics 53(5S1), 05FJ06 - (2014) [10.7567/JJAP.53.05FJ06]
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