Journal Article

FZJ-2017-06017

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Kissinger, G. ; Dabrowski, J. ; Sinno, T. ; Yang, Y. ; Kot, D. ; Sattler, A.

2017
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2016.10.073

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Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)
2. Modelling of Nucleation and Growth Processes for Silicon-Compatible Microelectronics (hfo06_20101101) (hfo06_20101101)

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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