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| Hauptseite > Publikationsdatenbank > Strain Induced insulator-conductor transition in epitaxial SrTiO3 films |
| Hauptseite > Publikationsdatenbank > Strain Induced insulator-conductor transition in epitaxial SrTiO3 films |
| Poster (Invited) | FZJ-2016-05293 |
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2016
Abstract: The metal-insulator transition temperature of SrTiO3 films grown on single crystalline DyScO3 (110), TbScO3 (110), and GdScO3 (110) substrates is tuned by the lattice-mismatch epitaxial strain. X-ray diffraction measurements demonstrate that all films are grown epitaxially. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between films and various substrates. It is shown that by a proper selection of mismatch between 0 to 1.6 % range of this study) and thickness between 5 to 200 nm of films, it is possible to control and precisely tune the metal-insulator transition temperature to a desired value, i.e. from 10 to 300 K. We demonstrate electrically switchable resistance using planar electrodes with 200-1000 nm distance. The electronic transport experimental results show an anisotropy transport for the anisotropically strained films. This confirms that the anisotropic misfit induced two in-plane phases have different behaviors that is highly directionally-dependent. Our results might be of importance for applications in storage, memory, and even artificial synaptic devices for neuromorphic computing.
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