%0 Journal Article
%A Zhao, J. Z.
%A Fan, W.
%A Verstraete, M. J.
%A Zanolli, Zeila
%A Fan, J.
%A Yang, X. B.
%A Xu, H.
%A Tong, S. Y.
%T Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces
%J Physical review letters
%V 117
%N 11
%@ 1079-7114
%C College Park, Md.
%I APS
%M FZJ-2016-05314
%P 116101
%D 2016
%X Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101¯0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls’s description. We predict that this type of insulating state should be visible in the partially hydrogenated (101¯0) surface of many wurtzite compounds.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000383247000003
%$ pmid:27661702
%R 10.1103/PhysRevLett.117.116101
%U https://juser.fz-juelich.de/record/819713