Home > Publications database > Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces |
Journal Article | FZJ-2016-05314 |
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2016
APS
College Park, Md.
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Please use a persistent id in citations: http://hdl.handle.net/2128/12515 doi:10.1103/PhysRevLett.117.116101
Abstract: Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101¯0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls’s description. We predict that this type of insulating state should be visible in the partially hydrogenated (101¯0) surface of many wurtzite compounds.
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