Journal Article FZJ-2016-05314

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Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

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2016
APS College Park, Md.

Physical review letters 117(11), 116101 () [10.1103/PhysRevLett.117.116101]

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Abstract: Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101¯0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls’s description. We predict that this type of insulating state should be visible in the partially hydrogenated (101¯0) surface of many wurtzite compounds.

Classification:

Contributing Institute(s):
  1. Quanten-Theorie der Materialien (IAS-1)
  2. Quanten-Theorie der Materialien (PGI-1)
  3. JARA-FIT (JARA-FIT)
  4. JARA - HPC (JARA-HPC)
  5. Physik der Medizinischen Bildgebung (INM-4)
Research Program(s):
  1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
  2. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2016
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Institute Collections > INM > INM-4
Institute Collections > PGI > PGI-1
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 Record created 2016-10-12, last modified 2021-01-29