TY  - JOUR
AU  - Zhao, J. Z.
AU  - Fan, W.
AU  - Verstraete, M. J.
AU  - Zanolli, Zeila
AU  - Fan, J.
AU  - Yang, X. B.
AU  - Xu, H.
AU  - Tong, S. Y.
TI  - Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces
JO  - Physical review letters
VL  - 117
IS  - 11
SN  - 1079-7114
CY  - College Park, Md.
PB  - APS
M1  - FZJ-2016-05314
SP  - 116101
PY  - 2016
AB  - Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101¯0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls’s description. We predict that this type of insulating state should be visible in the partially hydrogenated (101¯0) surface of many wurtzite compounds.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000383247000003
C6  - pmid:27661702
DO  - DOI:10.1103/PhysRevLett.117.116101
UR  - https://juser.fz-juelich.de/record/819713
ER  -